NDLI: Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy

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Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy

Content Provider	Scilit
Author	Watanabe, Atsushi Takahashi, Hirokazu Tanaka, Toshiyuki Ota, Hiroyuki Chikuma, Kiyofumi Amano, Hiroshi Kashima, Takayuki Nakamura, Ryo Akasaki, Isamu
Copyright Year	1999
Description	Journal: Japanese Journal of Applied Physics The correlation between the dislocation density and the electrical and optical properties of lightly Si-doped GaN films grown by metalorganic vapor phase epitaxy was investigated. Photo-electro-chemical (PEC) etching, developed by Youtsey et al.. [Appl. Phys. Lett. 73 (1998) 797], was applied to determine the dislocation density. We modified the PEC etching technique by introducing an additional pulsed sequence. Clear correlation was observed between the dislocation density and the Hall mobility and room-temperature photoluminescence intensity. The influence of the reactor pressure on the dislocation density is also discussed.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.38.L1159/pdf
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.38.l1159
Journal	Japanese Journal of Applied Physics
Issue Number	10B
Volume Number	38
Language	English
Publisher	IOP Publishing
Publisher Date	1999-10-01
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Dislocation Density Metalorganic Vapor Phase Epitaxy Vapor Phase
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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