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Cubic gan light emitting diode grown by metalorganic vapor-phase epitaxy (2000).
| Content Provider | CiteSeerX |
|---|---|
| Author | Epitaxy, Vapor-Phase Nakadaira, Atsushi |
| Abstract | this paper, we report on the doping characteristics of Si and Mg in the growth of cubic GaN by metalorganic vapor-phase epitaxy (MOVPE). We also report the growth of a p-n diode structure made of cubic GaN, and its characterization by electron-beam-induced-current (EBIC) and current injection measurements. |
| File Format | |
| Publisher Date | 2000-01-01 |
| Access Restriction | Open |
| Subject Keyword | Metalorganic Vapor-phase Epitaxy Cubic Gan P-n Diode Structure Current Injection Measurement |
| Content Type | Text |