NDLI: Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

Please wait, while we are loading the content...

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

Content Provider	Semantic Scholar
Author	Baek, Eunhye Rim, Taiuk Schütt, Julian Baek, Chang-Ki Kim, Kihyun Baraban, Larysa Cuniberti, Gianaurelio
Copyright Year	2017
Abstract	We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photogenerated hot electrons trapping by dopants ions and interfacial states. Finally, comparing back- and top-gate modulation, we derive the mechanisms of the transition between negative and positive photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.
Starting Page	6727
Ending Page	6734
Page Count	8
File Format	PDF HTM / HTML
DOI	10.1021/acs.nanolett.7b02788
PubMed reference number	28961014
Journal	Medline
Volume Number	17
Issue Number	11
Alternate Webpage(s)	http://nano.tu-dresden.de/pubs/reprints/Negative.pdf
Alternate Webpage(s)	https://doi.org/10.1021/acs.nanolett.7b02788
Journal	Nano letters
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Si nanowire heterostructures as high-performance field-effect transistors

Temperature-dependent photoconductance of heavily doped ZnO nanowires

Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors

Diameter-independent hole mobility in Ge/Si core/shell nanowire field effect transistors.

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors.

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors.

Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors.

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

Similar Documents

Si nanowire heterostructures as high-performance field-effect transistors

Temperature-dependent photoconductance of heavily doped ZnO nanowires

Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors

Diameter-independent hole mobility in Ge/Si core/shell nanowire field effect transistors.

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors.

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors.

Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors.

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.