NDLI: Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors.

Please wait, while we are loading the content...

Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors.

Content Provider	Semantic Scholar
Author	Su, Meng Zou, Xuming Gong, Youning Wang, Jianlu Liu, Yuan Ho, Johnny Chung Yin Liu, Xingqiang Liao, Lei
Copyright Year	2018
Abstract	Limited by the Boltzmann distribution of electrons, the sub-threshold swing (SS) of conventional MOSFETs cannot be less than 60 mV dec-1. This limitation hinders the reduction of power dissipation of the devices. Herein, we present high-performance In2O3 nanowire (NW) negative capacitance field-effect transistors (NC-FETs) by introducing a ferroelectric P(VDF-TrFE) layer in a gate dielectric stack. The fabricated devices exhibit excellent gate modulation with a high saturation current density of 550 μA μm-1 and an outstanding SS value less than 60 mV dec-1 for over 4 decades of channel current. The assembled inverter circuit can demonstrate an impressive voltage gain of 25 and a cut-off frequency of over 10 MHz. By utilizing the self-aligned fabrication scheme, the device can be ultimately scaled down to below 100 nm channel length. The devices with 200 nm channel length exhibit the best performances, in which a high on/off current ratio of >107, a large output current density of 960 μA μm-1 and a small SS value of 42 mV dec-1 are obtained at the same time. All these would not only evidently demonstrate the potency of NW NC-FETs to break through the Boltzmann limit in nanoelectronics, but also open up a new avenue to low-power transistors for portable products.
Starting Page	19131
Ending Page	19139
Page Count	9
File Format	PDF HTM / HTML
DOI	10.1039/c8nr06163g
Alternate Webpage(s)	https://hocityu.com/publications_files/Nanoscale_2018_Sub-60mV%20dec-1%20NW%20Transistors.pdf
PubMed reference number	30298891
Alternate Webpage(s)	https://doi.org/10.1039/c8nr06163g
Journal	Medline
Volume Number	10
Issue Number	40
Journal	Nanoscale
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Sub-kT/q Switching in Strong Inversion in PbZr_0.52Ti_0.48O₃ Gated Negative Capacitance FETs

In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications.

Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Simulation Study on the Design of Sub- $kT/q$ Non-Hysteretic Negative Capacitance FET Using Capacitance Matching

Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors.

Similar Documents

Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications.

Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Simulation Study on the Design of Sub- $kT/q$ Non-Hysteretic Negative Capacitance FET Using Capacitance Matching

Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors.

Sub-kT/q Switching in Strong Inversion in PbZr_0.52Ti_0.48O₃ Gated Negative Capacitance FETs