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Studies on deposition parameters of silicon-nitride films prepared by a silane-nitrogen plasma-enhanced-chemicaI-vapour-deposition process nitride films prepared by a silane-nitrogen
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Kyoung Ryun |
| Abstract | Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) technique using silane-nitrogen as the reactant-gas sources. The influence of the process parameters (such as the f low ratio of the reactant gases, the pressure, the substrate temperature, the radio frequency (r.f.) power, the time of deposition and the electrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/BF00921247 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |