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Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma‐enhanced chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Boher, Pierre Renaud, Monique Jzendoorn, L. J. Van I. Hily, Yves |
| Copyright Year | 1989 |
| Abstract | Very low H content SiN films have been deposited by a multipolar plasma‐enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized. |
| Starting Page | 511 |
| Ending Page | 513 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.100915 |
| Volume Number | 54 |
| Alternate Webpage(s) | https://pure.tue.nl/ws/files/1894165/Metis190839.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.100915 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |