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151 kA Õ cm 2 peak current densities in Si Õ SiGe resonant interband tunneling diodes for high-power mixed-signal applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chung, Sung-Yong Rice, Anthony Bergera, Paul R. |
| Copyright Year | 2003 |
| Abstract | Room-temperatureI –V characteristics of epitaxially grown Si/SiGe resonant interband tunneling diodes ~RITDs! with extremely high peak current densities are presented. By optimizing the physical design, doping concentrations, and post-growth anneal temperatures, RITDs having peak current densities over 150 kA/cm , peak-to-valley current ratios ~PVCRs! greater than 2, and an estimated speed index of 34 mV/ps have been obtained. The interplay among the conditions to achieve maximum current density and highest PVCR is discussed. This result demonstrates the high potential of this type of Si-based tunnel diode for high-power mixed-signal applications. © 2003 American Institute of Physics. @DOI: 10.1063/1.1618927 # |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www2.ece.ohio-state.edu/~berger/papers/2003oct_apl_jin_151kAcm2_high_Jp.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
