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High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ramesh, Anisha Berger, Paul R. Loo, Roger |
| Copyright Year | 2012 |
| Abstract | Si/SiGe resonant interband tunnel diodes were fabricated using chemical vapor deposition (CVD) on 200-mm diameter p-doped silicon wafers. The resonant interband tunnel diode structure consists of a p+-i-n+ diode that incorporates vapor phase doped δ-doping to enhance quantum mechanical tunneling probability. The tunneling barrier thickness is varied from 2 nm to 8 nm, and a record peak-to-valley current ratio of 5.2 for a CVD process is reported for a 6 nm barrier thickness with a room temperature peak tunneling current of 20 A/cm2. The current density increases exponentially with spacer thickness reduction with a maximum value of 280 A/cm2 for a 2 nm barrier. |
| Starting Page | 092104 |
| Ending Page | 092104 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3684834 |
| Volume Number | 100 |
| Alternate Webpage(s) | http://www2.ece.ohio-state.edu/~berger/papers/2012_apl_ramesh_5.2_PVCR_CVD-grown_SiGe_RITD.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
