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RF performance and modeling of Si/SiGe resonant interband tunneling diodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chung, Sung-Yong Yu, Ronghua Giacomo, S. J. Di Berger, P. Thompson, P. |
| Copyright Year | 2005 |
| Abstract | The RF performance of two different Si-based resonant interband tunneling diodes (RITD) grown by low-temperature molecular beam epitaxy (LT-MBE) were studied. An RITD with an active region of B /spl delta/-doping plane/2 nm i-Si/sub 0.5/Ge/sub 0.5//1 nm i-Si/P /spl delta/-doping plane yielded a peak-to-valley current ratio (PVCR) of 1.14, resistive cutoff frequency (f/sub r0/) of 5.6 GHz, and a speed index of 23.3 mV/ps after rapid thermal annealing at 650/spl deg/C for 1 min. To the authors' knowledge, these are the highest reported values for any epitaxially grown Si-based tunnel diode. Another RITD design with an active region of 1 nm p+ Si/sub 0.6/Ge/sub 0.4//B /spl delta/-doping plane/4-nm iSi/sub 0.6/Ge/sub 0.4//2 nm i-Si/P /spl delta/-doping plane and annealed at 825/spl deg/C for 1 min had a PVCR of 2.9, an f/sub r0/ of 0.4 GHz, and a speed index of 0.2 mV/ps. A small signal model was established to fit the measured S/sub 11/ data for both device designs. Approaches to increase f/sub r0/ are suggested based on the comparison between these two diodes. The two devices exhibit substantially different junction capacitance/bias relationships, which may suggest the confined states in the /spl delta/-doped quantum well are preserved after annealing at lower temperatures but are reduced at higher temperature annealing. A comprehensive dc/RF semi-physical model was developed and implemented in Agilent advanced design system (ADS) software. Instabilities in the negative differential resistance (NDR) region during dc measurements were then simulated. |
| Starting Page | 2129 |
| Ending Page | 2135 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/TED.2005.856183 |
| Volume Number | 52 |
| Alternate Webpage(s) | http://www2.ece.ohio-state.edu/~berger/papers/2005oct_TED_Jin_RF_5.6_GHz_RITD.pdf |
| Alternate Webpage(s) | http://eewww.eng.ohio-state.edu/~berger/papers/2005oct_TED_Jin_RF_5.6_GHz_RITD.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/TED.2005.856183 |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
