Loading...
Please wait, while we are loading the content...
Similar Documents
Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lupke, Felix Dolevzal, Jivr'i Cherepanov, Vasily Ovst''adal, Ivan Tautz, F. Stefan Voigtlander, Bert |
| Copyright Year | 2018 |
| Abstract | Abstract The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)–(7×7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)–(7×7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to 770 K results in a weak (7×7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)–(7×7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7×7) unit cells. Increasing the substrate temperature further to 920 K leads to a Te/Si(111)–( 2 3 × 2 3 )R30° surface reconstruction. We find that this surface configuration has an atomically flat structure with threefold symmetry. |
| Starting Page | 130 |
| Ending Page | 133 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.susc.2018.11.016 |
| Volume Number | 681 |
| Alternate Webpage(s) | https://arxiv.org/pdf/1810.05553v1.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.susc.2018.11.016 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
