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Wurtzite GaN Surface Structures Studied by Scanning Tunneling Microscopy and Reflection High Energy Electron Diffraction
| Content Provider | Semantic Scholar |
|---|---|
| Author | Smith, Arthur R. Ramachandran, Venkatachalam Feenstra, Randall M. Greve, David W. Shin, M. Skowronski, Marek Neugebauer, J. Northrup, John E. |
| Copyright Year | 1998 |
| Abstract | We report studies of the surface reconstructions for both the Ga-face and the N-face of wurtzite GaN films grown using molecular beam epitaxy. N-face reconstructions are primarily adatom-on-adlayer structures which can be formed by room temperature submonolayer Ga deposition. These structures undergo reversible order–disorder phase transitions to 1×1 in the temperature range of 200–300 °C. Ga-face reconstructions, on the other hand, require annealing to high temperatures (600–700 °C) in order to form, and in most cases they are stable at those temperatures. The film polarity is found to be determined by the initial nucleation stage of the film growth. |
| Starting Page | 1641 |
| Ending Page | 1645 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.581134 |
| Volume Number | 16 |
| Alternate Webpage(s) | http://www.cmu.edu/physics/stm/publ/7/avs1.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.581134 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
