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Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hsieh, J.-L. Hsueh, H.-D. Gwo, Shangjr |
| Copyright Year | 2002 |
| Abstract | By using scanning tunneling microscopy and spectroscopy (STM and STS), the initial stages of NH 3 exposure on Si(111)-(7×7) at different substrate temperatures and dosages have been studied. At room and very high (∼1050°C) temperatures, the 7×7 surface structure remains and the nitrided sites appear darker, randomly distributing on the surface. Moreover, we find a constant ratio (∼3.46-3.83) of reacted center adatoms to reacted corner adatoms on the partially nitrided surfaces. At intermediately temperatures (∼900°C), the majority (>90%) of the reacted surface forms the well-ordered silicon nitride 8×8 reconstruction. In this regime, hexagonal- and triangular-shaped nitride islands can be observed on the 8×8 and 7X7 surfaces, respectively. We have also used STS to investigate the changes of local density of states on the nitrogen-reacted 7X7 surfaces prepared by different conditions. |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevB.65.045309 |
| Volume Number | 65 |
| Alternate Webpage(s) | http://nthur.lib.nthu.edu.tw/retrieve/63397/2010109010027.pdf |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevB.65.045309 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
