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Control of Metal-to-Insulator Phase Transition in VO 2 Thin Films via Interface Engineering
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yajima, Takeaki Nishimura, Takumi Toriumi, Akira |
| Copyright Year | 2014 |
| Abstract | Functional materials often change their physical properties in nano-scale due to the nontrivial contribution from the surface. Vanadium dioxide (VO2), showing metal-to-insulator transition (MIT) by electronic doping as well as by optical stimuli, is a promising material for novel switching/interconnecting devices. However, the effect purely from the surface is still elusive in this material. In this work, VO2 thin films with the thickness < 10 nm were fabricated on two different interfaces with metallic and insulating underlayers, respectively. We found that only the metallic interface caused a drastic decrease in the transition temperature (TMIT), the magnitude of which was anti-proportional to the thickness of the VO2 layer. These results experimentally verified that interfacial electron doping can modify the TMIT of the whole structure; the core concept of a Mott transistor electronically controlling the thermodynamic phase transition via gate/channel interface. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2014/H-4-2/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2014.H-4-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
