Loading...
Please wait, while we are loading the content...
Similar Documents
Deposition & Planarization Depth of Focus in Lithography
| Content Provider | Semantic Scholar |
|---|---|
| Abstract | Scaling of interconnects requires more metal layers with reduced interconnect pitch. The height of metal has to be increased. The increased aspect ratio between the metal lines will increase dramatically the problem of step coverage. The interconnect topography can cause problems in step coverage and lithography. From optics: F number = f D = focal length of lens diameter of lens Resolution = 1. 22λF number Depth of field = ±2λF number 2 Example: We need to resolve 0.1 µm lines and spaces If λ = 180 nm for the light source, we need F number =0.45 to resolve 0.1 µm features |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://web.stanford.edu/class/ee311/NOTES/Deposition_Planarization.pdf |
| Alternate Webpage(s) | http://web.stanford.edu/class/ee311/NOTES/Deposition_Planarization.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
