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Determination of the planarization distance for copper cmp process (1999).
| Content Provider | CiteSeerX |
|---|---|
| Author | Brown, Hymes Smekalin |
| Abstract | A previously published planarization monitor which had been applied to oxide CMP is extended to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined stepheight -reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm, comparable to that reported in oxide CMP. INTRODUCTION Copper has emerged as the leading contender for back-end-of-line metallization for advanced integrated circuits. Lack of a viable copper etch process and depth-of-focus limitations of advanced lithography leads to the chemical-mechanical polishing (CMP) of Damascene structures as the preferred method by which copper-based metallization is fo... |
| File Format | |
| Publisher Date | 1999-01-01 |
| Access Restriction | Open |
| Subject Keyword | Planarization Distance Copper Cmp Process Oxide Cmp Copper System Pattern Dependency Pad Type Advanced Lithography Introduction Copper Conventional Profilometry Typical Stiff-pad Copper Cmp Process Advanced Integrated Circuit Viable Copper Etch Process Planarization Monitor Copper Overburden Planarization Damascene Structure Planarization Performance Defined Stepheight Reduction-ratio Back-end-of-line Metallization Chemical-mechanical Polishing Copper-based Metallization Preferred Method Illustrative Result Acousto-optic Measurement Tool Process Condition Depth-of-focus Limitation |
| Content Type | Text |
