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Effect of substrate on processing of multi-gun sputter deposited, near-stoichiometric Ni2MnGa thin films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Bayer, Bernhard C. Khan, Abdul Faheem Mehmood, M. Fahad Barber, Zoe H. |
| Copyright Year | 2010 |
| Abstract | Abstract Near-stoichiometric Ni 2 MnGa thin films were sputter deposited with a multi-gun sputter deposition system onto sapphire, silicon dioxide and silicon substrates and exposed to heat treatments in vacuum. The multi-gun setup was proven to be feasible for switching compositions quickly and reliably. Using chemical, morphological, magnetic and structural characterisation methods the effects of the different substrates on the Ni 2 MnGa film properties as a function of heat treatment temperature were studied: sapphire and silicon dioxide provided a metallurgically inert substrate for Ni 2 MnGa thin films and resulted in films showing room temperature magnetizations of up to ~ 350 kA/m and austenitic/martensitic structures upon heat treatments at 700 °C. The highest mechanical stability of Ni 2 MnGa occurred on sapphire substrates, due to the closest match of the thermal expansion coefficients. Silicon substrates led to silicide formation for heating temperatures of 550 °C and above, leading to the loss of ferromagnetism and the austenite/martensite structure in the films. |
| Starting Page | 2659 |
| Ending Page | 2664 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.tsf.2009.08.030 |
| Volume Number | 518 |
| Alternate Webpage(s) | https://umexpert.um.edu.my/file/publication/00013086_113074.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.tsf.2009.08.030 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
