Effect of crystallographic orientations on electrical properties of sputter-deposited nickel oxide thin films

Content Provider	Semantic Scholar
Author	Chen, Hao-Long Yang, Yao-Sheng
Copyright Year	2008
Abstract	Abstract Nickel oxide thin films of various preferred orientations were deposited by radio-frequency (RF) magnetron sputtering process in different gas ratios of oxygen atmosphere at RF power 200 W on unheated and heated for (673 K) substrates. The relationships among substrate temperature, preferred orientation and electrical properties of the NiO films were investigated. The resulting films were analyzed by grazing-incidence X-ray diffraction, high-resolution transmission electron microscopy (HR-TEM), and ultrahigh resolution scanning electron microscopy (HR-SEM). The electrical properties were measured using four probe and Hall effects measurements. The results show that films deposited at room temperature with the ratio of oxygen varying from 0 to 100% develop a (111) preferred orientation. At temperature of 673 K, while the (111)-orientated film was obtained under a low ratio of oxygen ( 2 ), a (200) preferred orientation was developed under 100% oxygen. The lowest sheet resistance 0.01 MΩ/□, resistivity 0.83 Ω-cm and higher carrier density 7.35 × 10 18 cm −3 could be obtained on (111) preferred orientation samples prepared on unheated substrates in pure oxygen atmosphere. The relationship between preferred orientation and electrical properties was proposed in this paper.
Starting Page	5590
Ending Page	5596
Page Count	7
File Format	PDF HTM / HTML
DOI	10.1016/j.tsf.2007.07.035
Volume Number	516
Alternate Webpage(s)	http://www.kyu.edu.tw/teacpage/teacpage97/97%E8%AB%96%E6%96%87%E6%88%90%E6%9E%9C%E5%BD%99%E7%B7%A8/010.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article