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Defects in -implanted Si studied by slow positron implantation spectroscopy
| Content Provider | Scilit |
|---|---|
| Author | Kuna, S. A. E. Coleman, P. G. Nejim, A. Cristiano, F. Hemment, P. L. F. |
| Copyright Year | 1998 |
| Description | Journal: Semiconductor Science and Technology Slow positron implantation spectroscopy has been applied to the investigation of point defects formed during the synthesis of buried SiGe alloy layers in Si by high-dose implantation and post-amorphization with . It is seen that omitting the post-amorphization stage prior to annealing leaves a damaged layer, containing open volume defects, extending beyond the -implanted overlayer. Provided that the Ge dose is low enough to allow planar crystal regrowth, post-amorphization appears to inhibit defect formation. Samples implanted with higher doses contain as-yet unidentified defects. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/13/4/007/pdf |
| Ending Page | 398 |
| Page Count | 5 |
| Starting Page | 394 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/13/4/007 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 4 |
| Volume Number | 13 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1998-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Nuclear Energy and Engineering Defect Formation Point Defects Positron Implantation Spectroscopy Post Amorphization Slow Positron Implantation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
