NDLI: Annealing of radiation defects in dual-implanted silicon

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Annealing of radiation defects in dual-implanted silicon

Content Provider	Scilit
Author	Kozlov, I. P. Odzhaev, V. B. Popok, Vladimir Hnatowicz, V.
Copyright Year	1996
Description	Journal: Semiconductor Science and Technology Silicon samples dual implanted with and ions and then furnace annealed at temperatures up to were studied using RBS and EPR. An anomalous decrease of defect concentration after subsequent implantation with boron and nitrogen ions to the same dose was observed due to radiation annealing. A transformation of simple point defects to pentavacancies during annealing was found, which depends on the degree of silicon amorphization. The defect annealing temperature was found to be a function of the dose and ion species combination in the first and second implantations.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/11/5/012/pdf
Ending Page	725
Page Count	4
Starting Page	722
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/11/5/012
Journal	Semiconductor Science and Technology
Issue Number	5
Volume Number	11
Language	English
Publisher	IOP Publishing
Publisher Date	1996-05-01
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Nuclear Energy and Engineering
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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