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Post-implantation annealing of SiC studied by slow-positron spectroscopies
| Content Provider | Scilit |
|---|---|
| Author | Brauer, G. Anwand, W. Coleman, P. G. Störmer, J. Plazaola, F. Campillo, J. M. Pacaud, Y. Skorupa, W. |
| Copyright Year | 1998 |
| Description | Journal: Journal of Physics: Condensed Matter The effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques. The measurements are supported by new calculations of positron lifetimes in vacancy clusters in SiC. At both fluences two defected layers are identified and characterized by depth and defect type as a function of annealing temperature. The results indicate that it is impossible to remove the radiation damage by annealing at temperatures up to . |
| Related Links | http://iopscience.iop.org/article/10.1088/0953-8984/10/5/022/pdf |
| Ending Page | 1156 |
| Page Count | 10 |
| Starting Page | 1147 |
| ISSN | 09538984 |
| e-ISSN | 1361648X |
| DOI | 10.1088/0953-8984/10/5/022 |
| Journal | Journal of Physics: Condensed Matter |
| Issue Number | 5 |
| Volume Number | 10 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1998-02-09 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Condensed Matter Nuclear Energy and Engineering Radiation Damage Ion Implantation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Materials Science |
