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Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN
| Content Provider | Scilit |
|---|---|
| Author | Reddy, V. Rajagopal Kim, Sang-Ho Song, June O. Seong, Tae-Yeon |
| Copyright Year | 2003 |
| Description | Journal: Semiconductor Science and Technology We have investigated a low-resistance thermally stable Pd/Re ohmic contact on moderately doped p-GaN:Mg (1.1 × $10^{17}$ $cm^{−3}$). It is shown that the I–V characteristic of the as-deposited sample is improved upon annealing at 550 °C for 1 min under $N_{2}$ ambient. However, annealing the sample at 650 °C results in the degradation of the I–V behaviour. Specific contact resistance as low as 8.7 × $10^{−4}$ Ω $cm^{2}$ is obtained from the Pd(20 nm)/Re(25 nm) contact annealed at 550 °C. It is also shown that the contact exhibits thermal stability during annealing at 550 °C. Auger electron microscopy and glancing angle x-ray diffraction studies are carried out to characterize interfacial reactions between the Pd/Re contacts and the GaN. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/18/6/325/pdf |
| Ending Page | 544 |
| Page Count | 4 |
| Starting Page | 541 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/18/6/325 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 6 |
| Volume Number | 18 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2003-04-28 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Metallurgy and Metallurgical Engineering Contact Resistance Electron Microscopy X Ray Diffraction Ohmic Contact Thermal Stability |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
