NDLI: Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability

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Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability

Content Provider	Scilit
Author	Kwak, Joon Seop Mohney, S. E. Lin, Je-Yi Kern, R. S.
Copyright Year	2000
Description	Journal: Semiconductor Science and Technology The Al/Ti/n-GaN ohmic contact and multilayer variations on this contact are widely used because of the low contact resistivities they provide to n-GaN. However, there are few reports that reveal the influence of the atomic ratio of Al to Ti on the contact resistivity, thermal stability and surface morphology of the contacts. This study reveals that the ratio of Al to Ti strongly influences all of these characteristics. All contacts in this study had atomic ratios of Al to Ti higher than 1. Those contacts with ratios of Al to Ti less than 3 required higher annealing temperatures or longer annealing times to reach comparable contact resistivities compared to the more Al-rich contacts. On the other hand, the less Al-rich contacts provided several advantages. They exhibited smooth surface morphologies even after they were annealed at temperatures near 1000 °C, and they suffered much less severe degradation during long-term aging at 600 °C. These findings are explained by differences in the phases formed after annealing.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/15/7/316/pdf
Ending Page	760
Page Count	5
Starting Page	756
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/15/7/316
Journal	Semiconductor Science and Technology
Issue Number	7
Volume Number	15
Language	English
Publisher	IOP Publishing
Publisher Date	2000-06-23
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Applied Physics Ohmic Contact Contact Resistance Thermal Stability
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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