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Au/Pt/Ti/Pt base contacts to n-InGaP/p+-GaAs for self-passivating HBT ledge structures
| Content Provider | Scilit |
|---|---|
| Author | Nebauer, E. Mai, M. Würfl, J. Österle, W. |
| Copyright Year | 2000 |
| Description | Journal: Semiconductor Science and Technology Multi-layer ohmic contact systems such as Au/Pt/Ti/Pt on III-V double layers such as $n-InGaP/p^{+}$-GaAs are of considerable technological relevance, e.g. for heterojunction bipolar transistors. The paper shows that such contacts can be effectively reacted through the InGaP layer and exhibit very good contact resistances (0.1 Ω mm) to the base layer if the thickness of the first Pt layer is properly matched to the thickness of the contacted InGaP layer. Interdiffusion and phase formation associated with the annealing processes are studied by cross-sectional analytical transmission electron microscopy, thin-film x-ray diffraction and Auger electron spectroscopy depth profiling. Thermal ageing experiments up to 400 °C show good electrical stability. Device related reliability tests do not show any degradation effect related to this novel base contact. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/15/8/306/pdf |
| Ending Page | 822 |
| Page Count | 5 |
| Starting Page | 818 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/15/8/306 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 8 |
| Volume Number | 15 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2000-06-30 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Metallurgy and Metallurgical Engineering Double Layer X Ray Diffraction Heterojunction Bipolar Transistor Thin Film Cross Section Contact Resistance Auger Electron Spectroscopy Ohmic Contact |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
