NDLI: Reactive ion etching of GaAs using CH4: in He, Ne and Ar

Content Provider	Scilit
Author	Law, V. J. Ingram, S. G. Tewordt, M. Jones, G. A. C.
Copyright Year	1991
Description	Journal: Semiconductor Science and Technology RF-plasma reactive ion etching of GaAs using a dilute mixture of methane in helium, hydrogen, neon or argon is described. The process is shown to etch GaAs at rates up to 60 nm $min^{-1}$ for $CH_{4}$:Ar, with a high degree of anisotropy. Results show that etch rates scale with the substitution of $He
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/6/5/019/pdf
Ending Page	413
Page Count	3
Starting Page	411
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/6/5/019
Journal	Semiconductor Science and Technology
Issue Number	5
Volume Number	6
Language	English
Publisher	IOP Publishing
Publisher Date	1991-05-01
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Metallurgy and Metallurgical Engineering Rating Scale Reactive Ion Etching
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Reactive ion etching of GaAs using CH4: in He, Ne and Ar