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Reactive ion etching of GaN layers using

Content Provider	Scilit
Author	Basak, D. Verdú, M. Montojo, M. T. Sánchez-García, M. A. Sánchez, F. J. Muñoz, E. Calleja, E.
Copyright Year	1997
Description	Journal: Semiconductor Science and Technology The characteristics of reactive ion etching of gallium nitride layers, using etching gas are investigated. The GaN etch rate is examined by varying the bias voltage and the flow rate of . For bias voltages in the range of 250 V to 400 V, the etch rate is found to increase with voltage, attaining a maximum rate of at 400 V. The rate also increases with increasing flow. The addition of an inert gas, Ar, or of a reactive gas, , is found to barely affect the etch rate. Surface morphology after etching is checked by atomic force microscopy and scanning electron microscopy, which show that the smoothness of the etched surface is comparable to that of the unetched, and the etched sidewall forms an angle of to the surface normal.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/12/12/019/pdf
Ending Page	1657
Page Count	4
Starting Page	1654
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/12/12/019
Journal	Semiconductor Science and Technology
Issue Number	12
Volume Number	12
Language	English
Publisher	IOP Publishing
Publisher Date	1997-12-01
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Condensed Matter Physics Atomic Force Microscopy Flow Rate Reactive Ion Etching Scanning Electron Microscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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