NDLI: Parametric reactive ion etching of InP using Cl2and CH4gases: effects of H2and Ar addition

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Parametric reactive ion etching of InP using Cl2and CH4gases: effects of H2and Ar addition

Content Provider	Scilit
Author	Yu, Jae Su Lee, Yong Tak
Copyright Year	2002
Description	Journal: Semiconductor Science and Technology The etching characteristics of InP by reactive ion etching (RIE) using $Cl_{2}$ and $CH_{4}$ gases were investigated systematically as functions of various etching parameters. The etching parameters, such as $Cl_{2}$ flow rate, $CH_{4}$ flow rate, rf power and process pressure, were varied. The effects of $H_{2}$ or Ar addition to the $Cl_{2}$ and the $CH_{4}$ discharges were compared. The etch rates of $SiO_{2}$ mask during $Cl_{2}$ RIE process were also measured. The etched profiles, sidewall roughness and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. Auger electron spectroscopy was used to examine the elemental composition of etched surfaces and to evaluate contamination. The possible mechanism for these etching phenomena is discussed. The results suggest that a $CH_{4}/H_{2}$ gas mixture is the most promising for achieving ideal etching profiles (i.e., anisotropy, good surface morphology, smooth sidewall roughness) for optoelectronic device applications.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/17/3/309/pdf
Ending Page	236
Page Count	7
Starting Page	230
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/17/3/309
Journal	Semiconductor Science and Technology
Issue Number	3
Volume Number	17
Language	English
Publisher	IOP Publishing
Publisher Date	2002-02-18
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Condensed Matter Physics Reactive Ion Etching Scanning Electron Microscopy Auger Electron Spectroscopy Atomic Force Microscopy Flow Rate
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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