NDLI: Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces

Content Provider	Scilit
Author	Huang, Hung-Wen Chu, Jung-Tang Kao, Chih-Chiang Hsueh, Tao-Hung Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung Yu, Chang-Chin Kuo, Shou-Yi
Copyright Year	2006
Description	Journal: Japanese Journal of Applied Physics The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.45.3442/pdf
Ending Page	3445
Page Count	4
Starting Page	3442
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.45.3442
Journal	Japanese Journal of Applied Physics
Issue Number	4B
Volume Number	45
Language	English
Publisher	IOP Publishing
Publisher Date	2006-04-25
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Public, Environmental and Occupational Health
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces