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Improved Light Extraction Efficiency of InGaN-Based Light-Emitting Diodes with Patternedn-GaN Substrate
| Content Provider | Scilit |
|---|---|
| Author | Kwon, Kwang-Woo Park, Si-Hyun Cho, Seong-Su Kim, Bong-Jin Kim, Ig-Hyeon Lee, June Key Ryu, Sang Wan Kim, Young Ho |
| Copyright Year | 2007 |
| Description | Journal: Japanese Journal of Applied Physics We improved the light extraction efficiency of InGaN-based light-emitting diodes (LEDs) in which an n-type GaN layer was patterned onto a sapphire substrate with nano-sized $SiO_{2}$ columns. Indium tin oxide thin layer deposition on a $SiO_{2}$ layer followed by wet etching gives rise to oxide self-assembled clusters of 100–400 nm size and a subsequent $SiO_{2}$ etching with an oxide mask results in $SiO_{2}$ columns on an n-type GaN layer. The output power of the patterned n-GaN substrate (PNS) LED shows a 1.33 time increase compared with that of a normal LED without an n-GaN pattern when the total output power emitted in all directions from the packaging LED was measured under a current injection of 20 mA. The increase in output power from the PNS LED depends on the size of the $SiO_{2}$ columns on the n-type GaN substrate. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.46.7622/pdf |
| Ending Page | 7625 |
| Page Count | 4 |
| Starting Page | 7622 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.46.7622 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 12 |
| Volume Number | 46 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2007-12-06 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Public, Environmental and Occupational Health Indium Tin Oxide Light Emitting Diodes Light Emitting Diode |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
