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Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
| Content Provider | Semantic Scholar |
|---|---|
| Author | Huang, Hung-Wen Chu, Jung-Tang Wang, Wei-Chih Lu, Tien-Chang Kuo, Hao-Chung Wang, S. C. Kuo, Shou-Yi |
| Copyright Year | 2007 |
| Abstract | Abstract The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm 2 was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface. |
| Starting Page | 182 |
| Ending Page | 186 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.mseb.2006.09.030 |
| Volume Number | 136 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/11217/1/000243843800015.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.mseb.2006.09.030 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
