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Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chiu, Yu-Sheng Lin, Tai Ming Nguyen, Quan Weng, Y. C. Nguyen, Chi Lang Lin, Yueh Chin Chang, Edward Yi Lee, Cedric K. M. |
| Copyright Year | 2014 |
| Abstract | Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc. |
| Starting Page | 011216 |
| Ending Page | 011216 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.4862165 |
| Volume Number | 32 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/23870/1/000330774300019.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.4862165 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
