NDLI: Indium-based ohmic contacts to n-GaAs, fabricated using an ion-assisted deposition technique

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Indium-based ohmic contacts to n-GaAs, fabricated using an ion-assisted deposition technique

Content Provider	Scilit
Author	Davies, D. W. Morgan, D. V. Thomas, H.
Copyright Year	1999
Description	Journal: Semiconductor Science and Technology The effect of simultaneously depositing In metallization on n-GaAs using a novel ion-assisted deposition (IAD) technique has been investigated. Using current-voltage, specific contact resistance and secondary ion mass spectroscopy measurements, the contacts were compared to conventional contacts fabricated using thermal evaporation. Ion-mixed contacts fabricated with an ion dose of 2.8 × $10^{18}$ ion $cm^{-2}$ and ion energy of 1 keV exhibited a lower specific contact resistance of 3 × $10^{-6}$ $cm^{-2}$ at a lower annealing temperature of 375 °C compared to conventionally fabricated contacts. For all ion doses the annealing time and temperature which gave the minimum specific contact resistance remained unchanged. SIMS analysis also confirmed that the In deposited using the ion deposition technique formed a graded junction prior to annealing. After annealing both ion-mixed and thermally evaporated contacts had formed the graded junction and were electrically comparable.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/14/7/305/pdf
Ending Page	620
Page Count	6
Starting Page	615
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/14/7/305
Journal	Semiconductor Science and Technology
Issue Number	7
Volume Number	14
Language	English
Publisher	IOP Publishing
Publisher Date	1999-01-01
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Applied Physics Ohmic Contact Contact Resistance
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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