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The barrier height and interface effect of Au-n-GaN Schottky diode
| Content Provider | Scilit |
|---|---|
| Author | Khan, M. R. H. Detchprohm, T. Hacke, P. Hiramatsu, K. Sawaki, N. |
| Copyright Year | 1995 |
| Description | Journal: Journal of Physics D: Applied Physics Schottky barrier contact using Au and ohmic contact using Al were made on n-GaN grown by hydride vapour phase epitaxy. The diodes were characterized in the range 77-373 K. Under forward bias, the ideality parameter n=1.04 and the threshold voltage is 1.1 V. The reverse bias leak current is below $10^{-9}$ A on a reverse bias of -10 V. The temperature-dependence of the I-V characteristics shows two regimes of forward current transport: one at low voltage governed by thermionic emission and the high-voltage regime due to spatial inhomogeneities at the metal-semiconductor interface. The barrier height phi$ _{B}$ and the electron affinity $X_{S}$ were determined to be 0.91 and 4.19 eV, respectively, by I-V measurement; and 1.01+or-0.02 and 4.09 eV, respectively, by C-V measurement. The results have been discussed. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3727/28/6/021/pdf |
| Ending Page | 1174 |
| Page Count | 6 |
| Starting Page | 1169 |
| ISSN | 00223727 |
| e-ISSN | 13616463 |
| DOI | 10.1088/0022-3727/28/6/021 |
| Journal | Journal of Physics D: Applied Physics |
| Issue Number | 6 |
| Volume Number | 28 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1995-06-14 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics D: Applied Physics Applied Physics Condensed Matter Physics Electron Affinity Low Voltage Schottky Diode High Voltage Threshold Voltage Ohmic Contact Schottky Barrier |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials |
