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Silicide formation in Ni-Si Schottky barrier diodes
| Content Provider | Scilit |
|---|---|
| Author | Coe, D. J. Rhoderick, E. H. |
| Copyright Year | 1976 |
| Description | Journal: Journal of Physics D: Applied Physics Rutherford backscattering of energetic$ ^{4}He^{+}$ ions has been used to study the composition and depth profile of silicide layers formed when thin nickel films evaporated on (111) and (100) silicon surfaces are heated in a nitrogen-hydrogen ambient. In the temperature range 297 to 430 degrees C two phases are seen to form sequentially. The growth of the first phase, $Ni_{2}$Si, is parabolic with time, whilst the second, NiSi, grows linearly with time. The simultaneous presence of both diffusion and reaction-rate-limiting mechanisms is implied by the parabolic and linear growth laws. An investigation of the electrical characteristics of diodes which were metallized and heat-treated simultaneously shows little change in the barrier height. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3727/9/6/009/pdf |
| Ending Page | 972 |
| Page Count | 8 |
| Starting Page | 965 |
| ISSN | 00223727 |
| e-ISSN | 13616463 |
| DOI | 10.1088/0022-3727/9/6/009 |
| Journal | Journal of Physics D: Applied Physics |
| Issue Number | 6 |
| Volume Number | 9 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1976-04-21 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics D: Applied Physics Applied Physics Heat Treatment Schottky Diode Schottky Barrier |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials |
