NDLI: The modelling of edge current in Schottky barrier devices

Content Provider	Scilit
Author	Al-Baidhawi, K. Howes, M. J. Morgan, D. V.
Copyright Year	1978
Description	Journal: Journal of Physics D: Applied Physics That component of the terminal current of Schottky diodes due to the high fringing fields at the metal periphery is discussed. Special device structures are described which enable the peripheral current to be measured unambiguously. Reasonable qualitative agreement is obtained with a theoretical estimate of the peripheral current using thermionic and thermionic-field emission theories.
Related Links	http://iopscience.iop.org/article/10.1088/0022-3727/11/8/012/pdf
Ending Page	1210
Page Count	8
Starting Page	1203
ISSN	00223727
e-ISSN	13616463
DOI	10.1088/0022-3727/11/8/012
Journal	Journal of Physics D: Applied Physics
Issue Number	8
Volume Number	11
Language	English
Publisher	IOP Publishing
Publisher Date	1978-06-01
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics D: Applied Physics Applied Physics Schottky Barrier Field Emission Schottky Diode
Content Type	Text
Resource Type	Article
Subject	Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials

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The modelling of edge current in Schottky barrier devices