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Fabrication and Characteristics of Schottky Gated Poly(3-alkylthiophene) Field Effect Transistors
| Content Provider | Scilit |
|---|---|
| Author | Ohmori, Yutaka Takahashi, Hiroyuki Muro, Keiro Uchida, Masao Kawai, Tsuyoshi Kawai Tsuyoshi Yoshino, Katsumi Yoshino Katsumi |
| Copyright Year | 1991 |
| Description | Journal: Japanese Journal of Applied Physics Fabrication and characterization of Schottky gated poly(3-alkylthiophene) field effect transistors have been reported. The transistors have been realized using free-standing poly(3-alkylthiophene) films with Schottky gated electrode configuration with low drive voltages. From the FET characteristics, the carrier mobility is evaluated to be $3×10^{-3}$ $cm^{2}$/V·s. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.30.L610/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.30.l610 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4A |
| Volume Number | 30 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1991-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Field Effect Transistors Field Effect Transistor Conducting Polymers |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
