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Surface effects on positron annihilation in elementary semiconductors
| Content Provider | Scilit |
|---|---|
| Author | Gainotti, A. Ghezzi, C. |
| Copyright Year | 1972 |
| Description | Journal: Journal of Physics C: Solid State Physics Positron lifetime spectra are studied in Ge powder samples having different grain size and doping. Two lifetime components are detected in powders having grain sizes smaller than about 50 mu m. The faster component ( tau _{1}$=(2.20+or-0.20)*10^{-10}$ s) is ascribed to annihilations in the bulk, while the slower one ( tau _{2}$=(4.10+or-0.10)*10^{-10}$ s) is ascribed to annihilation processes taking place in the oxide surface layer. The presence of the oxide layer is described by means of a potential well whose shape is determined partially by the sign and the amount of the surface charge density at the semiconductor-oxide interface. The experimental results are discussed on the basis of this model, and also by taking account of previous data obtained by the authors for Si powders. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3719/5/7/008/pdf |
| Ending Page | 786 |
| Page Count | 8 |
| Starting Page | 779 |
| ISSN | 00223719 |
| DOI | 10.1088/0022-3719/5/7/008 |
| Journal | Journal of Physics C: Solid State Physics |
| Issue Number | 7 |
| Volume Number | 5 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1972-04-13 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics C: Solid State Physics Condensed Matter Physics Semiconductor Oxide |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Condensed Matter Physics Engineering |
