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A systematic study of positron lifetimes in semiconductors
| Content Provider | Scilit |
|---|---|
| Author | Dannefaer, S. |
| Copyright Year | 1982 |
| Description | Journal: Journal of Physics C: Solid State Physics Positron lifetimes for the ten semiconductors Si, Ge, alpha -Sn, GaP, GaAs, GaSb, InP, InAs, InSb, and CdTe as well as for diamond and SiC have been measured. The bulk-annihilation rates range from 8.7 $ns^{-1}$ for diamond to 3.44 $ns^{-1}$ for CdTe and agree well with theoretical calculations. The effect of doping of GaAs was investigated with four different concentrations of Si and of Cd and Cr. In contrast to Si, significant doping effects are present in GaAs. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3719/15/3/024/pdf |
| Ending Page | 605 |
| Page Count | 7 |
| Starting Page | 599 |
| ISSN | 00223719 |
| DOI | 10.1088/0022-3719/15/3/024 |
| Journal | Journal of Physics C: Solid State Physics |
| Issue Number | 3 |
| Volume Number | 15 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1982-01-30 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics C: Solid State Physics Positron Lifetimes |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Condensed Matter Physics Engineering |