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InGaN/GaN heterostructures with lateral confinement for light emitting diodes
| Content Provider | Scilit |
|---|---|
| Author | Kotlyar, K. P. Soshnikov, B. I. Morozov, I. A. Kudryashov, D. A. Zelentsov, K. S. Lysak, V. V. Soshnikov, I. P. |
| Copyright Year | 2016 |
| Description | Journal: Journal of Physics: Conference Series InGaN/GaN nanorod structure for light emission diode fabricated by the reactive plasma etching through the self-assembled Ni nano-cluster mask is presented. Fabricated array structure, presented in the form of truncated cones with average diameter height and period of nanorods is 250±50 nm, 430nm and 650±50 nm, respectively. The side angle of single structure about $80^{o}$. EL spectrum has maximum at 460 nm. |
| Related Links | http://iopscience.iop.org/article/10.1088/1742-6596/741/1/012083/pdf |
| ISSN | 17426588 |
| e-ISSN | 17426596 |
| DOI | 10.1088/1742-6596/741/1/012083 |
| Journal | Journal of Physics: Conference Series |
| Volume Number | 741 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-08-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Conference Series Applied Physics Light Emitting Diodes Light Emission Ingan/gan Heterostructures Lateral Confinement Diodes Ingan/gan |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
