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Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
| Content Provider | Scilit |
|---|---|
| Author | Chakraborty, Arpan Baker, Troy J. Haskell, Benjamin A. Wu, Feng Speck, James S. Denbaars, Steven P. Nakamura, Shuji Mishra, Umesh K. |
| Copyright Year | 2005 |
| Description | Journal: Japanese Journal of Applied Physics Growth of semipolar Group-III nitrides based devices offers a means of reducing the deleterious effects of the polarization-induced electric fields present in the polar quantum wells. We report on the fabrication of blue InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on semipolar (10-1-1) and (10-1-3) oriented GaN templates. A maximum on-wafer continuous wave output power of 190 µW was measured at 20 mA for 300×300 $µm^{2}$ devices, and output power as high as 1.53 mW was measured at 250 mA. Drive-current independent electroluminescence peak at 439 nm was observed for the LEDs grown on both the planes. The current–voltage characteristics of these LEDs showed rectifying behavior with a forward voltage of 3–4 V at 20 mA. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.44.L945/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.44.l945 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 7L |
| Volume Number | 44 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2005-07-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Electroluminescence Light Emitting Diode |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
