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Semipolar InGaN/GaN nanostructure light-emitting diodes onc-plane sapphire
| Content Provider | Scilit |
|---|---|
| Author | Rishinaramangalam, Ashwin K. Nami, Mohsen Fairchild, Michael N. Shima, Darryl M. Balakrishnan, Ganesh Brueck, S. R. J. Feezell, Daniel F. |
| Copyright Year | 2016 |
| Description | Journal: Applied Physics Express The fabrication of electrically injected triangular-nanostripe core–shell semipolar III–nitride LEDs (TLEDs) is demonstrated using interferometric lithography and catalyst-free bottom-up selective-area metal–organic chemical vapor deposition (MOCVD). This alternative approach enables semipolar orientations on inexpensive, c-plane sapphire substrates, in comparison with planar growth on free-standing GaN substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy reveal nonuniform quantum well thickness and composition, respectively, as a function of location on the triangular stripes. The broad electroluminescence spectra, wavelength shift with increasing current density, and nonlinear light vs current characteristics are well correlated with the observed quantum-well nonuniformities. |
| Related Links | http://iopscience.iop.org/article/10.7567/APEX.9.032101/pdf |
| ISSN | 18820778 |
| e-ISSN | 18820786 |
| DOI | 10.7567/apex.9.032101 |
| Journal | Applied Physics Express |
| Issue Number | 3 |
| Volume Number | 9 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-02-04 |
| Access Restriction | Open |
| Subject Keyword | Journal: Applied Physics Express |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |