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Impacts of oxidants in atomic layer deposition method on $Al_{2}O_{3}$/GaN interface properties
| Content Provider | Scilit |
|---|---|
| Author | Taoka, Noriyuki Kubo, Toshiharu Yamada, Toshikazu Egawa, Takashi Shimizu, Mitsuaki |
| Copyright Year | 2017 |
| Description | Journal: Japanese Journal of Applied Physics The electrical interface properties of GaN metal–oxide–semiconductor (MOS) capacitors with an $Al_{2}O_{3}$ gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance–voltage technique, Terman method, and conductance method. We found that $O_{3}$ and the alternate supply of $H_{2}$O and $O_{3}$ (AS-HO) are effective for reducing the interface trap density (D$ _{it}$) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation $(σ_{s}$) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a $SiO_{2}$ layer formed by chemical vapor deposition despite the small D$ _{it}$ values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, $σ_{s}$ has to be reduced to improve the performances and reliability of GaN devices with the $Al_{2}O_{3}$/GaN interfaces. |
| Related Links | http://iopscience.iop.org/article/10.7567/JJAP.57.01AD04/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.57.01ad04 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 1S |
| Volume Number | 57 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-12-11 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Nuclear Energy and Engineering |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
