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Advanced scanning electron and optical microscopy
| Content Provider | Scilit |
|---|---|
| Author | Cullis, A. G Beanland, R. |
| Copyright Year | 2000 |
| Description | The microscale recombination properties of modulation-doped (Al)GaAslln0_1Pllo.ssAs/GaAs heterostructures are analysed at 87 K by means. of plan-view electron beam induced current (EBIC) and cathodoluminescence (CL). Quantitative EBIC and CL measurements and imaging, associated with spectroscopic CL allow us to investigate a) the influence of the type of device (field effect transistor or conventional Schottky diode) on the collected signal b) the type of the dominating recombination at the quantum well. Book Name: Microscopy of Semiconducting Materials |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04313-5&isbn=9780429176135&doi=10.1201/9781482268690-16&format=pdf |
| Ending Page | 756 |
| Page Count | 94 |
| Starting Page | 663 |
| DOI | 10.1201/9781482268690-16 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2000-01-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials Microscopic Research Recombination Cathodoluminescence Spectroscopic |
| Content Type | Text |
| Resource Type | Chapter |