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Scanning probe microscopy
| Content Provider | Scilit |
|---|---|
| Author | Cullis, A. G Beanland, R. |
| Copyright Year | 2000 |
| Description | Using a scanning capacitance microscope (SCM) we have studied cross-sectioned n-and p-MOSFETs with gate lengths approaching 60 nm. In a homogeneous semiconductor, the SCM measures the depletion length, determining the dopant concentration. When imaging a real device there is an interaction between the probe tip and the built-in depletion of the p-n junction. Using a device simulator we can understand the relation between the SCM images and the position of the p-n junction, making the SCM a quantitative tool for junction delineation and direct measurement of the electrical channel length. Book Name: Microscopy of Semiconducting Materials |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04313-5&isbn=9780429176135&doi=10.1201/9781482268690-15&format=pdf |
| Ending Page | 662 |
| Page Count | 30 |
| Starting Page | 633 |
| DOI | 10.1201/9781482268690-15 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2000-01-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials Microscopic Research Homogeneous Dopant Capacitance Scm Semiconductor Microscope Electrical Tip Mosfets Delineation |
| Content Type | Text |
| Resource Type | Chapter |
