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Analytical electron microscopy of electronic materials
| Content Provider | Scilit |
|---|---|
| Author | Loretto, M. H. |
| Copyright Year | 2021 |
| Description | The techniques available in transmission electron microscopy have been critically assessed in terms of their usefulness in determining the detailed structure of superlattices, using GaAlAs-GaAs as the example. None of the available techniques has yet been shown to be capable of producing data of the required 2nm spatial and ±1.5at% compositional accuracies. EDX cannot give data of this significance, but intensity measurements using structure factor contrast, may be able to provide such data. Determination of the positions of thickness contours in cleaved samples is perhaps the most promising technique. |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 642 |
| Page Count | 10 |
| Starting Page | 633 |
| DOI | 10.1201/9781003069621-100 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Microscopic Research Structure Electron Microscopy Thickness Contours Promising Gaalas 1.5at |
| Content Type | Text |
| Resource Type | Chapter |
