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Strain analysis in sub-micron silicon devices by TEM/CBED
| Content Provider | Scilit |
|---|---|
| Author | Armigliato, A. Balboni, R. Frabboni, S. Benedetti, A. Cullis, A. G. Pavia, G. |
| Copyright Year | 2018 |
| Description | The main aspects of the convergent beam electron diffraction technique (CBED) in a transmission electron microscope (TEM) for the quantitative strain analysis of silicon nanoregions are described. The presently employed procedure to obtain the components of the strain tensor from an experimental CBED pattern is detailed. The method has been applied to the analysis of strain in 0.22 p.m active stripes of shallow trench isolation (STI) structures for non volatile memories. The strain distribution along outlines parallel to the padoxide/Si interface in STI structures with different morphologies can be related to the different technological steps. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-100&type=chapterpdf |
| Ending Page | 472 |
| Page Count | 6 |
| Starting Page | 467 |
| DOI | 10.1201/9781351074629-100 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Atmospheric Sciences Structures Strain Analysis Experimental Convergent Trench Memories Morphologies |
| Content Type | Text |
| Resource Type | Chapter |
