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Theoretical and experimental limits of quantitative analysis of strain and chemistry of InGaAs/GaAs layers using (200) darkfield TEM imaging
| Content Provider | Scilit |
|---|---|
| Author | Cagnon, J. Buffat, P. A. Stadelmann, P. A. Leifer, K. |
| Copyright Year | 2018 |
| Description | Book Name: Microscopy of Semiconducting Materials 2003 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2017-0-66874-9&isbn=9781351074636&doi=10.1201/9781351074636-47&format=pdf |
| Ending Page | 206 |
| Page Count | 4 |
| Starting Page | 203 |
| DOI | 10.1201/9781351074636-47 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-10 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2003 Atmospheric Sciences |
| Content Type | Text |
| Resource Type | Chapter |