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Improvement in crystal quality of GaN films with quantum dots as buffer layers grown on sapphire substrates by molecular beam epitaxy D Huang, C W Litton, M A Reshchikov, F Yun, T King, A A Baski and H Morkoq
| Content Provider | Scilit |
|---|---|
| Author | Arakawa, Y. Hirayama, Y. Kishino, K. Yamaguchi, H. |
| Copyright Year | 2002 |
| Description | The samples reported in this paper were grown on c-plane sapphire substrates by MBE with both ammonia and radio frequency activated nitrogen sources. Two sets of samples were grown. The first set of samples included a buffer containing a few AIN and GaN layers grown at different temperatures. The second set contained a buffer layer into which additional QD structures were inserted. GaN films were grown on top of these buffer layers at various temperatures. Book Name: Compound Semiconductors 2001 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-11470-1&isbn=9780429181191&doi=10.1201/9781482268980-99&format=pdf |
| Ending Page | 744 |
| Page Count | 6 |
| Starting Page | 739 |
| DOI | 10.1201/9781482268980-99 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2002-09-30 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Compound Semiconductors 2001 Crystallography Nitrogen Structures Sapphire Substrates Buffer Layers Gan Films |
| Content Type | Text |
| Resource Type | Chapter |
