Loading...
Please wait, while we are loading the content...
GaN layers grown directly onto GaAs by molecular beam epitaxy
| Content Provider | Scilit |
|---|---|
| Author | Pécz, B. Tóth, L. Czigány, Zs Amimer, K. Georgakilas, A. |
| Copyright Year | 2018 |
| Description | GaN layers were grown by radio-frequency nitrogen plasma source molecular beam epitaxy onto both (001) and (111) GaAs wafers. The deposition temperature was varied from 500°C up to 730°C. GaN layers grown on (111) GaAs are hexagonal with columnar morphology. The growth onto (001) GaAs results in hexagonal layers under nitrogen-rich conditions, while cubic GaN layers are grown at a stoichiometric N/Ga ratio. The grown layers are studied by transmission electron microscopy in cross section. The orientation relationships are determined. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-62&type=chapterpdf |
| Ending Page | 296 |
| Page Count | 4 |
| Starting Page | 293 |
| DOI | 10.1201/9781351074629-62 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Mycology Peripheral Vascular Disease Nitrogen Epitaxy Hexagonal Gan Layers Grown |
| Content Type | Text |
| Resource Type | Chapter |
