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Large Geometry FinFET Device Operation
| Content Provider | Scilit |
|---|---|
| Author | Saha, Samar K. |
| Copyright Year | 2020 |
| Description | This chapter presents detailed mathematical formulations to derive drain current in fin field-effect transistor (FinFET) devices. First of all, the basic features of FinFETs are overviewed to show that a double gate (DG) FinFET (DG-FinFET) structure can be represented by a DG-MOSFET structure. Then a set of simplifying assumptions are made to derive a continuous drain current expression for long-channel devices applicable to all regions of device operation. Next, the regional drain current expressions for linear, saturation, and subthreshold operations are derived from the continuous drain current expression for intuitive analysis of device performance. Finally, the subthreshold characteristics of DG-FinFET devices are discussed and it is shown that the ideal subthreshold slope of 60 mV/decade can be achieved in long-channel FinFET devices. Book Name: FinFET Devices for VLSI Circuits and Systems |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2018-0-77218-3&isbn=9780429504839&doi=10.1201/9780429504839-5&format=pdf |
| Ending Page | 182 |
| Page Count | 32 |
| Starting Page | 151 |
| DOI | 10.1201/9780429504839-5 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-07-15 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Finfet Devices for Vlsi Circuits and Systems Quantum Science and Technology Structure Finfet Devices Subthreshold Drain Current Expression |
| Content Type | Text |
| Resource Type | Chapter |
