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Multiple-Gate Metal-Oxide-Semiconductor (MOS) System
| Content Provider | Scilit |
|---|---|
| Author | Saha, Samar K. |
| Copyright Year | 2020 |
| Description | This chapter presents the basic structure and operation of multiple-gate metal-oxide-semiconductor (MOS) capacitor systems as the foundation for developing fin field-effect transistor (FinFET) device theory. Analytical expressions for multiple-gate MOS capacitor systems are derived to discuss the accumulation, depletion, and inversion mode operations of multiple-gate MOS capacitor systems. A unified surface potential function is developed to analyze the characteristics of multiple-gate MOS capacitors applicable to FinFET devices. Finally, a unified inversion charge expression is presented to account for the substrate doping effect in multiple-gate MOS capacitors. Book Name: FinFET Devices for VLSI Circuits and Systems |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2018-0-77218-3&isbn=9780429504839&doi=10.1201/9780429504839-3&format=pdf |
| DOI | 10.1201/9780429504839-3 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-07-15 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Finfet Devices for Vlsi Circuits and Systems Quantum Science and Technology Function Structure Mos Finfet Semiconductor Unified Multiple Gate Capacitor Systems |
| Content Type | Text |
| Resource Type | Chapter |